Title | Aging Benefits in Nanometer CMOS Designs |
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Authors | Rossi, D., Tenentes, V, Yang, S, Khursheed, S and Al-Hashimi, B.M. |
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Abstract | In this paper, we show that BTI aging of MOS transistors, together with its detrimental effect for circuit performance and lifetime, presents considerable benefits for static power consumption due to sub-threshold leakage current reduction. Indeed, static power reduces considerably, making CMOS circuits more energy efficient over time. Static power reduction depends on transistor stress ratio and operating temperature. We propose a simulation flow allowing us to properly evaluate the BTI aging of complex circuits in order to estimate BTI-induced power reduction accurately. Through HSPICE simulations, we show 50% static power reduction after only 1 month of operation, which exceeds 78% in 10 years. BTI aging benefits for power consumption are also proven with experimental measurements. |
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Keywords | BTI aging, leakage current, static power, nanometer technology, energy-efficiency |
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Journal | IEEE Transactions on Circuits and Systems II - Express Brief |
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Journal citation | 64 (3), pp. 324-328 |
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ISSN | 1549-7747 |
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Year | 2017 |
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Publisher | IEEE |
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Accepted author manuscript | |
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Digital Object Identifier (DOI) | https://doi.org/10.1109/TCSII.2016.2561206 |
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Publication dates |
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Published online | 02 May 2016 |
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Published in print | Mar 2017 |
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Published | 02 May 2016 |
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